SK Hynix and Samsung advance HBM4 and HBM4E for AI accelerators

Samsung Electronics' sales of sixth-generation high bandwidth memory chips, known as HBM4, surpassed $1 billion, industry sources said Tuesday. The milestone comes just four months after the South Korean tech giant became the first company in the world to begin mass production and shipments of HBM4 chips in February. Industry sources expect Samsung's HBM4 revenue to exceed $1.2 billion by the end of June. Samsung has rapidly expanded HBM4 shipments since the product's launch, helping it gain market share in the fast-growing HBM segment. HBM4 chips are designed for next-generation artificial intelligence (AI) accelerators, including Nvidia Corp.'s Vera Rubin platform. Nvidia's graphics processing units are widely used in generative AI applications. The global HBM market is currently dominated by fifth-generation HBM3E products. However, industry observers expect HBM4 to become a key growth driver as demand for advanced AI chips accelerates.

AI hardware doesn’t use regular DDR memory – it’s too slow. Instead, the preferred format is High Bandwidth Memory or HBM. SK hynix just announced that it has started delivering samples of the latest HBM4E to its customers. HBM4E delivers 16Gbps of bandwidth per pin. For comparison, the previous HBM4 standard did 10Gbps per pin. Samsung started sampling its own HBM4E design a month ago and it claimed 14Gbps per pin. The design currently being shipped to SK hynix’s partners has 12 dies stacked on top of each other. This 12-layer design works out to 48GB of capacity – that is per...

SK Hynix said on Thursday that it had begun shipping samples of HBM4E, its next generation of high-bandwidth memory for AI, to major customers. The number that matters is the one the chipmaker is leading with: a 12-layer stack reaching 48GB of capacity, running at up to 16Gbps per pin, with power efficiency improved by […] This story continues at The Next Web

SK hynix said Thursday it has shipped samples of high-bandwidth memory 4E (HBM4E) for next-generation artificial intelligence (AI) processors to major customers. The company said it delivered 12-high HBM4E samples on schedule, and will work closely with partners for mass production “in a timely manner.” HBM4E is the seventh generation of HBM, a high-performance DRAM designed for rapid data processing and used in graphics processing units (GPUs) and other AI accelerators that require massive computing power. The previous version, HBM4, is set to be used for Nvidia’s Vera Rubin AI supercomputer, which will be released in the third quarter, and HBM4E is expected to be used for Vera Rubin Ultra platform next year. SK hynix said the 12-high HBM4E delivers improvements in both performance and power efficiency. The product offers a maximum data transfer speed of 16 gigabits per second (Gbps) per pin and more than 20 percent higher power efficiency compared to previous models. The HBM4E reduces data transfer latency through its latest interface and design optimization while maintaining stab

- Delivers 12-high HBM4E samples to major customers - Achieves a maximum speed of 16Gbps per pin with improvements in both performance and efficiency - Utilizes Advanced MR-MUF, reducing heat resistance by 17% while improving stability - SK hynix strengthens its AI leadership with HBM4E...

Samsung HBM4E samples: In a monumental milestone for next-generation artificial intelligence hardware, Samsung Electronics has officially announced the commencement of shipping the industry’s first 12-layer HBM4E (High Bandwidth Memory 4E) samples. This landmark release, deployed earlier than the tech giant’s initial mid-2026 forecast, is aimed directly at addressing the explosive demand for advanced AI accelerators […]